Current Collapse and Reliability of III-N Heterostructure Field Effect Transistors

Author(s)

A. Koudymov
M. S. Shur
Grigory Simin, University of South Carolina - ColumbiaFollow
R. Gaska

Document Type

Article

Publication Info

Published in Physica Status Solidi (RRL) - Rapid Research Letters, Volume 1, Issue 3, 2007, pages 116-118.

©Physica Status Solidi (RRL) - Rapid Research Letters 2007, Wiley-VCH Verlag.

Koudymov, A., Shur, M. S., Simin, G., & Gaska, R. (May 2007). Current Collapse and Reliability of III-N Heterostructure Field Efffect Transistors. Physica Status Solidi (RRL) - Rapid Research Letters, 1 (3), 116-118. http://dx.doi.org/10.1002/pssr.200701047

Rights

©Physica Status Solidi (RRL) - Rapid Research Letters 2007, Wiley-VCH Verlag.

Koudymov, A., Shur, M. S., Simin, G., & Gaska, R. (May 2007). Current Collapse and Reliability of III-N Heterostructure Field Efffect Transistors. Physica Status Solidi (RRL) - Rapid Research Letters, 1 (3), 116-118. http://dx.doi.org/10.1002/pssr.200701047