Strain Energy Band Engineering Approach to AlN/GaN/InN Heterojunction Devices

Author(s)

M. S. Shur
R. Gaska
J. W. Yang
Grigory Simin, University of South Carolina - ColumbiaFollow
M. A. Khan

Document Type

Article

Publication Info

Published in 2001 International Semiconductor Device Research Symposium, 2001, pages 436-441.

©2001 International Semiconductor Device Research Symposium 2001, Institute of Electrical and Electronics Engineers (IEEE).

Shur, M. S., Gaska, R., Yang, J. W., Simin, G., & Khan, A. (December 2001). Strain Energy Band Engineering Approach to AlN/GaN/InN Heterojunction Devices. 2001 International Semicodnuctor Device Research Symposium, 436-441. http://dx.doi.org/10.1109/ISDRS.2001.984539

Rights

©2001 International Semiconductor Device Research Symposium 2001, Institute of Electrical and Electronics Engineers (IEEE).

Shur, M. S., Gaska, R., Yang, J. W., Simin, G., & Khan, A. (December 2001). Strain Energy Band Engineering Approach to AlN/GaN/InN Heterojunction Devices. 2001 International Semicodnuctor Device Research Symposium, 436-441. http://dx.doi.org/10.1109/ISDRS.2001.984539