Analytical HFET I-V Model in Presence of Current Collapse

Author(s)

A. Koudymov
M. S. Shur
Grigory Simin, University of South Carolina - ColumbiaFollow
Kanin Chu
P.C. Chao
Taehun Lee
J. Jimenez
A. Balistreri

Document Type

Article

Publication Info

Published in IEEE Transactions on Electron Devices, Volume 55, Issue 3, 2008, pages 712-720.

©IEEE Transactions on Electron Devices 2008, Institute of Electrical and Electronics Engineers (IEEE).

Koudymov, A., Shur, M. S., Simin, G., Chu, K., Chao, P. C., Lee, T., Jimenez, J., & Balisteri, A. (March 2008). Analytical HFET I-V Model in Presence of Current Collapse. IEEE Transactions on Electron Devices, 55 (3), 712-720. http://dx.doi.org/10.1109/TED.2007.915092

Rights

©IEEE Transactions on Electron Devices 2008, Institute of Electrical and Electronics Engineers (IEEE).

Koudymov, A., Shur, M. S., Simin, G., Chu, K., Chao, P. C., Lee, T., Jimenez, J., & Balisteri, A. (March 2008). Analytical HFET I-V Model in Presence of Current Collapse. IEEE Transactions on Electron Devices, 55 (3), 712-720. http://dx.doi.org/10.1109/TED.2007.915092