Tight-Binding Molecular Dynamics Simulation of Desorbed SiO Molecule during the Oxidation of Si(111) Surface

Author(s)

A. Yamada
A. Endou
H. Takaba
K. Teraishi
Salai Cheettu Ammal, University of South Carolina - ColumbiaFollow
M. Kubo
K. G. Nakamura
M. Kitajima
A. Miyamoto

Document Type

Article

Subject Area(s)

Applied Physics, Chemistry

Publication Info

Published in Japanese Journal of Applied Physics, Volume 38, Issue 4B, 1999, pages 2434-2437.

© Japanese Journal of Applied Physics 1999, Japanese Society of Applied Physics

Yamada, A., Endou, A., Takaba, H., Teraishi, K., Ammal, S. S. C., Kubo, M., Nakamura, K. G., Kitajima, M., & Miyamoto, A. (1999). Tight-binding molecular dynamics simulation of desorbed SiO molecule during the oxidation of Si(111) surfaces. Japanese Journal of Applied Physics, 38(4B), 2434-2437.

http://dx.doi.org/10.1143/JJAP.38.2434

Rights

© Japanese Journal of Applied Physics 1999, Japanese Society of Applied Physics

Yamada, A., Endou, A., Takaba, H., Teraishi, K., Ammal, S. S. C., Kubo, M., Nakamura, K. G., Kitajima, M., & Miyamoto, A. (1999). Tight-binding molecular dynamics simulation of desorbed SiO molecule during the oxidation of Si(111) surfaces. Japanese Journal of Applied Physics, 38(4B), 2434-2437.

http://dx.doi.org/10.1143/JJAP.38.2434