We have made extensive studies of the temperature, gate voltage, and electric field dependences of the conductance peaks in small silicon inversion layers in order to distinguish between resonant-tunneling models and a hopping model. We find that many of the peaks are consistent only with a hopping model, whereas some could be consistent with an early resonant-tunneling model. None of our structure is consistent with resonant tunneling if the recent formulation of Stone and Lee is correct.
Published in Physical Review Letters, ed. Gene D. Sprouse, Volume 54, Issue 14, 1985, pages 1577-1580.
Webb, R. A., Hartstein, A., Wainer, J. J., & Fowler, A. B. (1985). Origin of the peaked structure in the conductance of one-dimensional silicon accumulation layers. Physical Review Letters, 54(14), 1577-1580. DOI: 10.1103/PhysRevLett.54.1577
© Physical Review Letters, 1985, American Physical Society