Measurements of the tunneling rate Γ out of the zero-voltage state for several Nb edge junctions with differing shunt capacitances are described. At zero temperature, increasing the shunt capacitance lowers Γ in agreement with dissipative calculations of the macroscopic-quantum-tunneling rate. As temperature increases, ln[Γ(T)/Γ(0)]∝T2 as recently predicted.
Published in Physical Review Letters, ed. Gene D. Sprouse, Volume 54, Issue 25, 1985, pages 2712-2715.
Washburn, S., Webb, R. A., Voss, R. F., & Faris, S. M. (1985). Effects of dissipation and temperature on macroscopic quantum tunneling. Physical Review Letters, 54(25), 2712-2715. DOI: 10.1103/PhysRevLett.54.2712
© Physical Review Letters, 1985, American Physical Society