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Gd(3-x)vxS4 provides a convenient analog of a compensated semiconductor in which, for x≃0.3, the mobility edge can be tuned smoothly through the Fermi energy by the application of a magnetic field. The results of a search for a minimum metallic conductivity demonstrate that, down to T=6 mK, the metal-insulator transition is smooth. In the insulating regime, the temperature dependence of the conductivity was more consistent with the theory of mutual interactions than with the theory of pure localization.

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