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Gd(3-x)vxS4 provides a convenient analog of a compensated semiconductor in which, for x≃0.3, the mobility edge can be tuned smoothly through the Fermi energy by the application of a magnetic field. The results of a search for a minimum metallic conductivity demonstrate that, down to T=6 mK, the metal-insulator transition is smooth. In the insulating regime, the temperature dependence of the conductivity was more consistent with the theory of mutual interactions than with the theory of pure localization.


Washburn, S., Webb, R. A., von Molnar, S., & Holtzberg, F. (1984). Absence of minimum metallic conductivity in Gd(3-x)vxS4 at very low temperature and evidence for a Coulomb gap. Physical Review B, 30(10), 6224-6226. DOI: 10.1103/PhysRevB.30.6224

© Physical Review B, 1984, American Physical Society

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