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We present measurements of the transport properties of 0.75-μm-long, narrow, insulating indium oxide wires and rings. These devices have no apparent tunnel barriers, yet they exhibit effects similar to those found in series arrays of very small-capacitance tunnel junctions: highly nonlinear I-V characteristics and a zero-bias conductance which is periodic in a voltage applied by means of a lateral gate. These effects are due to the influence of single-electron charging on transport through localized states in the insulating regime.


Chandrasekhar, V., Ovadyahu, Z., and Webb, R.A. (1991). Single-Electron Charging Effects in Insulating Wires. Physical Review Letters, 67(20), 2862-2865. doi: 10.1103/PhysRevLett.67.2862

© 1991 The American Physical Society.

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