We present measurements of the transport properties of 0.75-μm-long, narrow, insulating indium oxide wires and rings. These devices have no apparent tunnel barriers, yet they exhibit effects similar to those found in series arrays of very small-capacitance tunnel junctions: highly nonlinear I-V characteristics and a zero-bias conductance which is periodic in a voltage applied by means of a lateral gate. These effects are due to the influence of single-electron charging on transport through localized states in the insulating regime.
Published in Physical Review Letters, Volume 67, Issue 20, 1991, pages 2862-2865.
Chandrasekhar, V., Ovadyahu, Z., and Webb, R.A. (1991). Single-Electron Charging Effects in Insulating Wires. Physical Review Letters, 67(20), 2862-2865. doi: 10.1103/PhysRevLett.67.2862
© 1991 The American Physical Society.