We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a double-frequency component. We also demonstrate that there is a phase shift between applied and transverse-voltage oscillations, related to the general memristive behavior of semiconductor spintronic systems. A different method to achieve frequency doubling based on the inverse spin Hall effect is also discussed.
Published in Physical Review B, ed. Gene D. Sprouse, Volume 79, Issue 15, 2009, pages 153307-1-153307-4.
Pershin, Y. V., & Di Ventra, M. (2009). Frequency doubling and memory effects in the spin Hall effect. Physical Review B, 79(15), 153307-1 - 153307-4. DOI: 10.1103/PhysRevb.79.153307
© Physical Review B, 2009, American Physical Society