Document Type



We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a double-frequency component. We also demonstrate that there is a phase shift between applied and transverse-voltage oscillations, related to the general memristive behavior of semiconductor spintronic systems. A different method to achieve frequency doubling based on the inverse spin Hall effect is also discussed.


Pershin, Y. V., & Di Ventra, M. (2009). Frequency doubling and memory effects in the spin Hall effect. Physical Review B, 79(15), 153307-1 - 153307-4. DOI: 10.1103/PhysRevb.79.153307

© Physical Review B, 2009, American Physical Society

Included in

Physics Commons