Amorphous SiO2 nanowires with diameter ranging from 50 to 100 nm were synthesized using chemical vapor deposition(CVD) under an argon atmosphere at atmospheric pressure. Nanoscale three-point bending tests were performed directly on individual amorphous SiO2 nanowires using an atomic force microscope (AFM).Elastic modulus of the amorphous SiO2 nanowires was measured to be 76.6±7.2GPa, which is close to the reported value of the bulk SiO2 and thermally grown SiO2 thin films, but lower than that of plasma-enhanced CVD SiO2 thin films. The amorphous SiO2 nanowires exhibit brittle fracture failure in bending.
Published in Applied Physics Letters, Volume 88, Issue 4, 2006, pages #043108-.
©Applied Physics Letters 2006, American Institute of Physics.
Ni, H., Li, X., & Gao, H. (23 January 2006). Elastic Modulus of Amorphous SiO2 Nanowires. Applied Physics Letters, 88 (4), #043108. http://dx.doi.org/10.1063/1.2165275