We report on AlGaN/GaN heterostructures and heterostructurefield-effect transistors(HFETs) fabricated on high-pressure-grown bulk GaN substrates. The 2delectron gas channel exhibits excellent electronic properties with room-temperature electron Hall mobility as high as μ=1650 cm2/V s combined with a very large electron sheet density ns≈1.4×1013 cm−2.The HFET devices demonstrated better linearity of transconductance and low gate leakage, especially at elevated temperatures. We also present the comparative study of high-current AlGaN/GaN HFETs(nsμ>2×1016 V−1 s−1) grown on bulk GaN, sapphire, and SiC substrates under the same conditions. We demonstrate that in the high-power regime, the self-heating effects, and not a dislocation density, is the dominant factor determining the device behavior.
Published in Applied Physics Letters, Volume 76, Issue 25, 2000, pages 3807-3809.
©Applied Physics Letters 2000, American Institute of Physics (AIP).
Khan, M. A., Yang, J. W., Knap, W., Frayssinet, E., Hu, X., Simin, G., Prystawko, P., Leszczynski, M., Grzegory, I., Porowski, S., Gaska, R., Shur, M. S., Beaumont, B., Teisseire, M., & Neu, G. (19 June 2000). GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates. Applied Physics Letters, 76 (25), 3807-3809. http://dx.doi.org/10.1063/1.126788