We report on the spectral dynamics of the reflectivity, site-selectively excited photoluminescence,photoluminescence excitation, and time-resolved luminescence in quaternary AlInGaN epitaxial layers grown on GaN templates. The incorporation of a few percents of In into AlGaN causes significant smoothening of the band-bottom potential profile in AlInGaN layers owing to improved crystal quality. An abrupt optical bandgap indicates that a nearly lattice-matched AlInGaN/GaN heterostructure with large energy band offsets can be grown for high-efficiency light-emitting devices.
Published in Applied Physics Letters, Volume 77, Issue 14, 2000, pages 2136-2138.
©Applied Physics Letters 2000, American Institute of Physics (AIP).
Tamulaitis, G., Kazlauskas, K., Jursenas, S., Zukauskas, A., Khan, M. A., Yang, J. W., Zhang, J., Simin, G., Shur, M. S., & Gaska, R. (2 October 2000). Optical Bandgap Formation in AlInGaN Alloys. Applied physics Letters, 77 (14), 2136-2138. http://dx.doi.org/10.1063/1.1314288
Electromagnetics and Photonics Commons, Other Electrical and Computer Engineering Commons