Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates
We report on fabrication and characterization of blue GaN–InGaN multi-quantum well (MQW)light-emitting diodes(LEDs) over (111) silicon substrates. Device epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor depositiongrowth procedure in selective areas defined by openings in a SiO2mask over the substrates. This selective area deposition procedure in principle can produce multicolor devices using a very simple fabrication procedure. The LEDs had a peak emission wavelength of 465 nm with a full width at half maximum of 40 nm. We also present the spectral emission data with the diodes operating up to 250 °C. The peak emission wavelengths are measured as a function of both dc and pulse bias current and plate temperature to estimate the thermal impedance.
Published in Applied Physics Letters, Volume 76, Issue 3, 2000, pages 273-275.
©Applied Physics Letters 2000, American Institute of Physics (AIP).
Yang, J. W., Lunev, A., Simin, G., Chitnis, A., Shatalov, M., Khan, M. A., Van Nostrand, J. E., & Gaska, R. (17 January 2000). Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates. Applied Physics Letters, 76 (3), 273-275. http://dx.doi.org/10.1063/1.125745