Low frequency noise in 4H‐silicon carbide junction field effect transistors (JFETs) has been investigated. JFETs with a buried p + n junction gate were manufactured by CREE Research Inc. Very low noise level has been observed in the JFETs. At 300 K the value of Hooge constant α is as small as α∼10−5 and the α value can be decreased by an appropriate annealing to α∼2×10−6. It has been shown that even these extremely low noise values are determined not by the volume noise sources but by the noise at the SiC–SiO2 interface.
Published in Applied Physics Letters, Volume 68, Issue 19, 1996, pages 2669-2671.
©Applied Physics Letters 1996, American Institute of Physics (AIP).
Palmour, J. W., Levinshtein, M. E., Rumyantsev, S. L., & Simin, G. S. (6 May 1996). Low-Frequency Noise in 4H-Silicon Carbide Junction Field Effect Transistors. Applied Physics Letters, 68 (19), 2669-2671. http://dx.doi.org/10.1063/1.116276