Deep Ultraviolet Light-Emitting Diodes using Quaternary AllnGaN Multiple Quantum Wells

Author(s)

M. Shatalov
J. Zhang
A. S. Chitnis
V. AdivarahanFollow
J. Yang
Grigory Simin, University of South Carolina - ColumbiaFollow
M. A. Khan

Document Type

Article

Publication Info

Published in IEEE Journal of Selected Topics in Quantum Electronics, Volume 8, Issue 2, 2002, pages 302-309.

©IEEE Journal of Selected Topics in Quantum Electronics 2002, Institute of Electrical and Electronics Engineers (IEEE).

Shatalov, M., Zhang, J., Chitnis, A. S., Adivarahan, V., Yang, J., Simin, G., & Khan, M. A. (March/April 2002). Deep Ultraviolet Light-Emitting Diodes using Quaternary AllnGaN Multiple Quantum Wells. IEEE Journal of Selected Topics in Quantum Electronics, 8 (2), 302-309. http://dx.doi.org/10.1109/2944.999185

Rights

©IEEE Journal of Selected Topics in Quantum Electronics 2002, Institute of Electrical and Electronics Engineers (IEEE).

Shatalov, M., Zhang, J., Chitnis, A. S., Adivarahan, V., Yang, J., Simin, G., & Khan, M. A. (March/April 2002). Deep Ultraviolet Light-Emitting Diodes using Quaternary AllnGaN Multiple Quantum Wells. IEEE Journal of Selected Topics in Quantum Electronics, 8 (2), 302-309. http://dx.doi.org/10.1109/2944.999185