Power Stability of AlGaN/GaN HFTs at 20 W/mm in the Pinched-Off Operation Mode

Author(s)

A. Koudymov
C. X. Wang
V. AdivarahanFollow
J. Yang
Grigory Simin, University of South Carolina - ColumbiaFollow
M. Asif Khan

Document Type

Article

Publication Info

Published in IEEE Electron Device Letters, Volume 28, Issue 1, 2007, pages 5-7.

©IEEE Electron Device Letters 2007, Institute of Electrical and Electronics Engineers (IEEE).

Koudymov, A., Wang, C. X., Adivarahan, V., Yang, J., Simin, G., & Khan, M. A. (January 2007). Power Stability of AlGaN/GaN HFTs at 20 W/mm in the Pinched-Off Operation Mode. IEEE Electron Device Letters, 28 (1), 5 – 7. http://dx.doi.org/10.1109/LED.2006.887642

Rights

©IEEE Electron Device Letters 2007, Institute of Electrical and Electronics Engineers (IEEE).

Koudymov, A., Wang, C. X., Adivarahan, V., Yang, J., Simin, G., & Khan, M. A. (January 2007). Power Stability of AlGaN/GaN HFTs at 20 W/mm in the Pinched-Off Operation Mode. IEEE Electron Device Letters, 28 (1), 5 – 7. http://dx.doi.org/10.1109/LED.2006.887642