The temperature dependences of the peak position and width of the photoluminescence band in Al0.1In0.01Ga0.89N layers were explained by Monte Carlo simulation of exciton localization and hopping. The introduction of a doubled-scaled potential profile due to inhomogeneous distribution of indium allowed obtaining a good quantitative fit of the experimental data. Hopping of excitons was assumed to occur through localized states distributed on a 16 meV energy scale within the In-rich clusters with the average energy in these clusters dispersed on a larger (42 meV) scale.
Published in Applied Physics Letters, Volume 83, Issue 18, 2003, pages 3722-3724.
©Applied Physics Letters 2003, American Institute of Physics (AIP).
Kazlauskas, K., Tamulaitis, G., Zukauskas, A., Khan, M. A., Yang, J. W., Zhang, J., Simin, G., Shur, M. S., & Gaska, R. (28 October 2003). Double-Scaled Potential Profile in a Group-III Nitride Alloy Revealed by Monte Carlo Simulation of Exciton Hopping. Applied Physics Letters, 83 (18), 3722-3724. http://dx.doi.org/10.1063/1.1625111