Very Low Threshold Current Density Room Temperature Continuous-Wave Lasing from a Single-Layer InAs Quantum-Dot Laser

Author(s)

Xiaodong Huang
A. Stintz
C.P. Hains
G.T. Liu
J. Cheng
K.J. Malloy

Document Type

Article

Subject Area(s)

Optical physics

Abstract

Continuous-wave (CW) lasing operation with a very low threshold current density (J/sub th/=32.5 A/cm/sup 2/) has been achieved at room temperature by a ridge waveguide quantum-dot (QD) laser containing a single InAs QD layer embedded within a strained InGaAs quantum well (dot-in-well, or DWELL structure). Lasing proceeds via the QD ground state with an emission wavelength of 1.25 /spl mu/m when the cavity length is longer than 4.2 mm. For a 5-mm long QD laser, CW lasing has been achieved at temperatures as high as 40/spl deg/C, with a characteristic temperature T/sub 0/ of 41 K near room temperature. Lasers with a 20 /spl mu/m stripe width have a differential slope efficiency of 32% and peak output power of >10 mW per facet (uncoated).

Publication Info

Postprint version. Published in IEEE Photonics Technology Letters, Volume 12, Issue 3, 2000, pages 227-229.

© IEEE Photonics Technology Letters, 2000, IEEE

Huang, X., Stintz, A., Hains, C.P., Liu, G.T., Cheng, J., Malloy, K.J. (2000). Very Low Threshold Current Density Room Temperature Continuous-Wave Lasing from a Single-Layer InAs Quantum-Dot Laser. IEEE Photonics Technology Letters, 12(3), 227-229.

http://dx.doi.org/10.1109/68.826896