Conductance in Restricted-Dimensionality Accumulation Layers

Author(s)

A. B. Fowler
A. Hartstein
Richard A. Webb, University of South Carolina - ColumbiaFollow

Document Type

Article

Abstract

Conductance has been studied in metal-oxide-silicon field-effect transistor accumulation-layer samples in which it is possible to constrict the channel to small dimensions both perpendicular to the surface and perpendicular to the channel. A temperature-dependent conductance σ=σ₀exp[-(T₀/T)ⁿ] is observed, where n=1/2 for small channel widths and n=1/3 for larger channel widths. It is believed that this behavior arises from a transition from one-dimensional to two-dimensional variable-range hopping in the sample.

Publication Info

Published in Physical Review Letters, ed. Gene D. Sprouse, Volume 48, Issue 3, 1982, pages 196-199.

Fowler, A. B., Hartstein, A., & Webb, R. A. (1982). Conductance in restricted-dimensionality accumulation layers. Physical Review Letters, 48(3), 196-199. DOI: 10.1103/PhysRevLett.48.196

© Physical Review Letters, 1982, American Physical Society

Rights

Fowler, A. B., Hartstein, A., & Webb, R. A. (1982). Conductance in restricted-dimensionality accumulation layers. Physical Review Letters, 48(3), 196-199. DOI: 10.1103/PhysRevLett.48.196

© Physical Review Letters, 1982, American Physical Society