Absence of Minimum metallic Conductivity in Gd(3-x)vxS4 at Very Low Temperature and Evidence for a Coulomb Gap

Author(s)

S. Washburn
Richard A. Webb, University of South Carolina - ColumbiaFollow
S. von Molnar
F. Holtzberg

Document Type

Article

Abstract

Gd_(3-x)v_xS₄ provides a convenient analog of a compensated semiconductor in which, for x≃0.3, the mobility edge can be tuned smoothly through the Fermi energy by the application of a magnetic field. The results of a search for a minimum metallic conductivity demonstrate that, down to T=6 mK, the metal-insulator transition is smooth. In the insulating regime, the temperature dependence of the conductivity was more consistent with the theory of mutual interactions than with the theory of pure localization.

Publication Info

Published in Physical Review B, ed. Gene D. Sprouse, Volume 30, Issue 10, 1984, pages 6224-6226.

Washburn, S., Webb, R. A., von Molnar, S., & Holtzberg, F. (1984). Absence of minimum metallic conductivity in Gd_(3-x)v_xS₄ at very low temperature and evidence for a Coulomb gap. Physical Review B, 30(10), 6224-6226. DOI: 10.1103/PhysRevB.30.6224

© Physical Review B, 1984, American Physical Society