Effects of Annealing in O2 and N2 on the Microstructure of Metal Organic Chemical Vapor Deposition Ta2O5 Film and the Interfacial SiO2 Layer
Document Type
Article
Publication Info
Published in Journal of Materials Science: Materials in Electronics, Volume 10, Issue 2, 1999, pages 113-119.
©Journal of Materials Science: Materials in Electronics 1999, Springer.
Park, Y-B., Li, X., Nam, G-J., & Rhee, S-W., (1 April 1999). Effects of Annealing in O2 and N2 on the microstructure of Metal Organic Chemical Vapor Deposition Ta2O5 Film and the Interfacial SiO2 Layer. Journal of Materials Science: Materials in Electronics, 10 (2), 113 – 119. http://dx.doi.org/10.1023/A:1008960014883
Rights
©Journal of Materials Science: Materials in Electronics 1999, Springer.
Park, Y-B., Li, X., Nam, G-J., & Rhee, S-W., (1 April 1999). Effects of Annealing in O2 and N2 on the microstructure of Metal Organic Chemical Vapor Deposition Ta2O5 Film and the Interfacial SiO2 Layer. Journal of Materials Science: Materials in Electronics, 10 (2), 113 – 119. http://dx.doi.org/10.1023/A:1008960014883