Characterization of the Si/SiO₂ Interface Formed by Remote Plasma Enhanced Chemical Vapor Deposition from SiH₄/N₂O with or without Chlorine Addition

Author(s)

Young-Bae Park
Xiaodong Li, University of South Carolina - ColumbiaFollow
Shi-Woo Rhee

Document Type

Article

Abstract

The Si/SiO₂interface formed by remote plasma enhanced chemical vapor deposition (RPECVD) at low temperature with SiH₄/N₂O or SiH₄/N₂O/Cl₂ was studied and compared with thermal oxidation. The interface of the CVD SiO₂ without chlorine addition is rougher than that with chlorine addition. But the surface roughness of CVD SiO₂ films increases with chlorine addition. The thermal oxidation induces strong interface strains, and the strains generated by the CVD SiO₂ without chlorine addition are stronger and are distributed more nonuniformly than those by the chlorinated SiO₂. It is believed that chlorine addition during RPECVD affects the initial stages of deposition, and chlorine is combined with Si dangling bonds existing at the Si/SiO₂interface through the formation of Si–Cl _x bonds. It was also found that with chlorine addition during RPECVD, the strained layer thickness, interface trap density, and suboxide density could be lowered significantly.

Publication Info

Published in Journal of Vacuum Science & Technology B, Volume 14, Issue 4, 1996, pages #2660-.

Rights

©Journal of Vacuum Science & Technology B 1996, American Institute of Physics.

Park, Y-B., Li, X., & Rhee, S-W. (July 1996). Characterization of the Si/SiO₂ Interface Formed by Remote Plasma Enhanced Chemical Vapor Deposition from SiH₄/N₂O with or without Chlorine Addition. Journal of Vacuum Science & Technology B, 14 (4), #2660. http://dx.doi.org/10.1116/1.589001