Document Type
Article
Abstract
Deposition of aluminumfilm from DMEAA in the temperature range of 100–300 °C has been studied. In this temperature range, there is a maximum deposition rate at around 150 °C. The film deposited at 190 °C has elongated blocklike grain shapes, which are ∼600 nm in width and 930 nm in length. Grains in the film deposited at 150 °C showed an equiaxed structure with grain size in the range of 100–300 nm in a film with 600 nm thickness. Aluminum oxide particle inclusion was observed especially at high deposition temperature. Plausible reaction pathways of DMEAA dissociation were suggested to explain the experimental observations.
Publication Info
Published in Applied Physics Letters, Volume 68, Issue 25, 1996, pages #3567-.
©Applied Physics Letters 1996, American Institute of Physics.
Kim, B-Y., Li, X., & Rhee, S-W. (17 June 1996). Microstructure and Deposition Rate of Aluminum Thin Films from Chemical Vapor Deposition with Dimethylethylamine alane. Applied Physics Letters, 68 (25), #3567. http://dx.doi.org/10.1063/1.116639
Rights
©Applied Physics Letters 1996, American Institute of Physics.
Kim, B-Y., Li, X., & Rhee, S-W. (17 June 1996). Microstructure and Deposition Rate of Aluminum Thin Films from Chemical Vapor Deposition with Dimethylethylamine alane. Applied Physics Letters, 68 (25), #3567. http://dx.doi.org/10.1063/1.116639