Si₃N₄/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

Author(s)

X. Hu
A. Koudymov
Grigory Simin, University of South Carolina - ColumbiaFollow
J. Yang
M. Asif Khan
A. Tarakji
M. S. Shur
R. Gaska

Document Type

Article

Abstract

We report on a metal–insulator–semiconductor heterostructurefield-effect transistor (MISHFET) using Si₃N₄ film simultaneously for channel passivation and as a gate insulator. This design results in increased radio-frequency (rf) powers by reduction of the current collapse and it reduces the gate leakage currents by four orders of magnitude. A MISHFET room temperature gate current of about 90 pA/mm increases to only 1000 pA/mm at ambient temperature as high as 300 °C. Pulsed measurements show that unlike metal–oxide–semiconductor HFETs and regular HFETs, in a Si₃N₄ MISHFET, the gate voltage amplitude required for current collapse is much higher than the threshold voltage. Therefore, it exhibits significantly reduced rf current collapse.

Publication Info

Published in Applied Physics Letters, Volume 79, Issue 17, 2001, pages 2832-2834.

Rights

©Applied Physics Letters 2001, American Institute of Physics (AIP).

Hu, X., Koudymov, A., Simin, G., Yang, J., Khan, M. A., Tarakji, A., Shur, M. S., & Gaska, R. (22 October 2001). Si₃N₄/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors. Applied Physics Letters, 79 (17), 2832-2834. http://dx.doi.org/10.1063/1.1412591