Low-Frequency Noise in 4H-Silicon Carbide Junction Field Effect Transistors

Author(s)

J. W. Palmour
M. E. Levinshtein
S. L. Rumyantsev
Grigory Simin, University of South Carolina - ColumbiaFollow

Document Type

Article

Abstract

Low frequency noise in 4H‐silicon carbide junction field effect transistors (JFETs) has been investigated. JFETs with a buried p ⁺ n junction gate were manufactured by CREE Research Inc. Very low noise level has been observed in the JFETs. At 300 K the value of Hooge constant α is as small as α∼10⁻⁵ and the α value can be decreased by an appropriate annealing to α∼2×10⁻⁶. It has been shown that even these extremely low noise values are determined not by the volume noise sources but by the noise at the SiC–SiO₂ interface.

Publication Info

Published in Applied Physics Letters, Volume 68, Issue 19, 1996, pages 2669-2671.

©Applied Physics Letters 1996, American Institute of Physics (AIP).

Palmour, J. W., Levinshtein, M. E., Rumyantsev, S. L., & Simin, G. S. (6 May 1996). Low-Frequency Noise in 4H-Silicon Carbide Junction Field Effect Transistors. Applied Physics Letters, 68 (19), 2669-2671. http://dx.doi.org/10.1063/1.116276

Rights

©Applied Physics Letters 1996, American Institute of Physics (AIP).

Palmour, J. W., Levinshtein, M. E., Rumyantsev, S. L., & Simin, G. S. (6 May 1996). Low-Frequency Noise in 4H-Silicon Carbide Junction Field Effect Transistors. Applied Physics Letters, 68 (19), 2669-2671. http://dx.doi.org/10.1063/1.116276