Transient Response of Highly Doped Thin Channel GaN Metal-Semiconductor and Metal-Oxide-Semiconductor Field Effect Transistors

Author(s)

N. Pala
S. L. Rumyantsev
M. S. Shur
X. Hu
A. Tarakji
R. Gaska
M. Asif Khan
Grigory Simin, University of South Carolina - ColumbiaFollow
J. Yang

Document Type

Article

Publication Info

Published in Solid-State Electronics, Volume 46, Issue 5, 2002, pages 711-714.

©Solid-State Electronics 2002, Elsevier.

Pala, N., Rumyantsev, S. L., Shur, M. S., Hu, X., Tarakji, A., Gaska, R., Khan, M. A., Simin, G., & Yang, J. (May 2002). Transient Response of Highly Doped Thin Channel GaN Metal-Semiconductor and Metal-Oxide-Semiconductor Field Effect Transistors. Solid-State Electronics, 46 (5), 771-714. http://dx.doi.org/10.1016/S0038-1101(01)00302-1

Rights

©Solid-State Electronics 2002, Elsevier.

Pala, N., Rumyantsev, S. L., Shur, M. S., Hu, X., Tarakji, A., Gaska, R., Khan, M. A., Simin, G., & Yang, J. (May 2002). Transient Response of Highly Doped Thin Channel GaN Metal-Semiconductor and Metal-Oxide-Semiconductor Field Effect Transistors. Solid-State Electronics, 46 (5), 771-714. http://dx.doi.org/10.1016/S0038-1101(01)00302-1