Document Type
Article
Subject Area(s)
Electrical Engineering
Abstract
The single crystal growth of large semi‐insulating GaSe by the vertical Bridgman technique using zone‐refined selenium (Se) and HP gallium (Ga) is described. The grown crystals (up to 10 cm long and 2.5 cm diameter) have been characterized thoroughly by X‐ray diffraction (XRD), energy dispersive analysis by x‐rays (EDAX), optical absorption/transmission, X‐ray photoelectron spectroscopy (XPS), charge carrier electrical property measurements, second harmonic test, and radiation detection measurements.
Publication Info
Published in AIP Conference Proceedings, Volume 772, 2005, pages 159-160.
Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in
Mandal, K. C., Noblitt, C., Choi, M., Smirnov, A., & Rauh, R. D. (2005). Crystal growth, characterization and anisotropic electrical properties of GaSe single crystals for THz source and radiation detector applications. AIP Conference Proceedings, 772, 159-160. http://dx.doi.org/10.1063/1.1994042
and may be found at
http://scitation.aip.org/content/aip/proceeding/aipcp/10.1063/1.1994042
Rights
Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in
Mandal, K. C., Noblitt, C., Choi, M., Smirnov, A., & Rauh, R. D. (2005). Crystal growth, characterization and anisotropic electrical properties of GaSe single crystals for THz source and radiation detector applications. AIP Conference Proceedings, 772, 159-160. http://dx.doi.org/10.1063/1.1994042
and may be found at
http://scitation.aip.org/content/aip/proceeding/aipcp/10.1063/1.1994042