Investigation of Terahertz Generation Due to Unidirectional Diffusion of Carriers in Centrosymmetric GaTe Crystals

Author(s)

G. Xu
G. Sun
Y. J. Ding
I. B. Zotova
K. C. Mandal, University of South Carolina - ColumbiaFollow
A. Mertiri
G. Pabst
R. Roy
N. C. Fernelius

Document Type

Article

Subject Area(s)

Electrical Engineering, Quantum Electronics

Publication Info

Published in IEEE Journal of Selected Topics in Quantum Electronics, Volume 17, Issue 1, 2011, pages 30-37.

© IEEE Journal of Selected Topics in Quantum Electronics 2011, Institute of Electrical and Electronics Engineers

Xu, G., Sun, G., Ding, Y. J., Zotova, I. B., Mandal, K. C., Mertiri, A., Pabst, G., Roy, R. & Fernelius, N. C. (2011). Investigation of terahertz generation due to unidirectional diffusion of carriers in centrosymmetric GaTe crystals. IEEE Journal of Selected Topics in Quantum Electronics, 17(1), 30-37.

http://dx.doi.org/10.1109/JSTQE.2010.2046628

Rights

© IEEE Journal of Selected Topics in Quantum Electronics 2011, Institute of Electrical and Electronics Engineers

Xu, G., Sun, G., Ding, Y. J., Zotova, I. B., Mandal, K. C., Mertiri, A., Pabst, G., Roy, R. & Fernelius, N. C. (2011). Investigation of terahertz generation due to unidirectional diffusion of carriers in centrosymmetric GaTe crystals. IEEE Journal of Selected Topics in Quantum Electronics, 17(1), 30-37.

http://dx.doi.org/10.1109/JSTQE.2010.2046628