Surface and Defect Correlation Studies on High Resistivity 4H SiC Bulk Crystals and Epitaxial Layers for Radiation Detectors

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
P. G. Muzykov, University of South Carolina - ColumbiaFollow
Ramesh Madhu Krishna, University of South CarolinaFollow
Timothy C. Hayes, University of South CarolinaFollow

Document Type

Article

Subject Area(s)

Electrical Engineering, Optics

Publication Info

Published in Proceedings of SPIE, Volume 8142, 2011, pages 81420H-1-81420H-9.

© Proceedings of SPIE 2011, Society of Photo-optical Instrumentation

Mandal, K. C., Muzykov, P. G., Krishna, R. M., & Hayes, T. C. (27 September 2011). Surface and defect correlation studies on high resistivity 4H SiC bulk crystals and epitaxial layers for radiation detectors. Proceedings of SPIE, 8142, #81420H-1-9.

http://dx.doi.org/10.1117/12.896637

Rights

© Proceedings of SPIE 2011, Society of Photo-optical Instrumentation

Mandal, K. C., Muzykov, P. G., Krishna, R. M., & Hayes, T. C. (27 September 2011). Surface and defect correlation studies on high resistivity 4H SiC bulk crystals and epitaxial layers for radiation detectors. Proceedings of SPIE, 8142, #81420H-1-9.

http://dx.doi.org/10.1117/12.896637