A New Chemical Method of Preparing Semiconducting MoX₂ (X=S, Se) Thin Films

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
O. Savadogo

Document Type

Article

Subject Area(s)

Electrical Engineering, Applied Physics

Publication Info

Published in Japanese Journal of Applied Physics, Volume 30, Issue 12A, 1991, pages 3484-3487.

© Japanese Journal of Applied Physics 1991, Japan Society of Applied Physics

Mandal, K. C. & Savadogo, O. (December 1991). A new chemical method of preparing semiconducting MoX₂ (X=S, Se) thin films. Japanese Journal of Applied Physics, 30(12A), 3484-3487.

http://dx.doi.org/10.1143/JJAP.30.3484

Rights

© Japanese Journal of Applied Physics 1991, Japan Society of Applied Physics

Mandal, K. C. & Savadogo, O. (December 1991). A new chemical method of preparing semiconducting MoX₂ (X=S, Se) thin films. Japanese Journal of Applied Physics, 30(12A), 3484-3487.

http://dx.doi.org/10.1143/JJAP.30.3484