Doping Dependence of Electronic and Mechanical Properties of GaSe_1−xTe_x and Ga_1−xIn_xSe from First Principles

Author(s)

Zs. Rak
S. D. Mahanti
K. C. Mandal, University of South Carolina - ColumbiaFollow
N. C. Fernelius

Document Type

Article

Subject Area(s)

Engineering, Electrical Engineering, Physics

Publication Info

Published in Physical Review B, Volume 82, Issue 15, 2010, pages 155203-1-155203-10.

© Physical Review B 2010, American Physical Society

Rak, Zs., Mahanti, S. D., Mandal, K. C., & Fernelius, N. C. (12 October 2010). Doping dependence of electronic and mechanical properties of GaSe_1-xTe_x and Ga_1-xIn_xSe from first principles. Physical Review B, 82(15), #155203.

http://dx.doi.org/10.1103/PhysRevB.82.155203

http://journals.aps.org/prb/abstract/10.1103/PhysRevB.82.155203

Rights

© Physical Review B 2010, American Physical Society

Rak, Zs., Mahanti, S. D., Mandal, K. C., & Fernelius, N. C. (12 October 2010). Doping dependence of electronic and mechanical properties of GaSe_1-xTe_x and Ga_1-xIn_xSe from first principles. Physical Review B, 82(15), #155203.

http://dx.doi.org/10.1103/PhysRevB.82.155203

http://journals.aps.org/prb/abstract/10.1103/PhysRevB.82.155203