Characterization of Deep Levels in n-type and Semi-Insulating 4H-SiC Epitaxial Layers by Thermally Stimulated Current Spectroscopy

Author(s)

P. G. Muzykov, University of South Carolina - ColumbiaFollow
Ramesh Madhu Krishna, University of South CarolinaFollow
K. C. Mandal, University of South Carolina - ColumbiaFollow

Document Type

Article

Subject Area(s)

Engineering, Electrical Engineering

Publication Info

Published in Journal of Applied Physics, Volume 111, Issue 1, 2012, pages 014910-1-014910-7.

© Journal of Applied Physics 2012, American Institute of Physics

Muzykov, P. G., Krishna, R. M., & Mandal, K. C. (1 January 2012). Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy. Journal of Applied Physics, 111(1), #014910.

http://dx.doi.org/10.1063/1.3675513

http://scitation.aip.org/content/aip/journal/jap/111/1/10.1063/1.3675513

Rights

© Journal of Applied Physics 2012, American Institute of Physics

Muzykov, P. G., Krishna, R. M., & Mandal, K. C. (1 January 2012). Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy. Journal of Applied Physics, 111(1), #014910.

http://dx.doi.org/10.1063/1.3675513

http://scitation.aip.org/content/aip/journal/jap/111/1/10.1063/1.3675513