Experimental Determination of Electron-Hole Pair Creation Energy in 4H-SiC Epitaxial Layer: An Absolute Calibration Approach

Author(s)

S. K. Chaudhuri
K. J. Zavalla
K. C. Mandal, University of South Carolina - ColumbiaFollow

Document Type

Article

Subject Area(s)

Electrical Engineering, Applied Physics

Publication Info

Published in Applied Physics Letters, Volume 102, Issue 3, 2013, pages 031109-1-031109-4.

© Applied Physics Letters 2013, American Institute of Physics

Chaudhuri, S. K., Zavalla, K. J., & Mandal, K. C. (21 January 2013). Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach. Applied Physics Letters, 102(3), #031109.

http://dx.doi.org/10.1063/1.4776703

http://scitation.aip.org/content/aip/journal/apl/102/3/10.1063/1.4776703

Rights

© Applied Physics Letters 2013, American Institute of Physics

Chaudhuri, S. K., Zavalla, K. J., & Mandal, K. C. (21 January 2013). Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach. Applied Physics Letters, 102(3), #031109.

http://dx.doi.org/10.1063/1.4776703

http://scitation.aip.org/content/aip/journal/apl/102/3/10.1063/1.4776703