Temperature Dependence of Current Conduction in Semi-Insulating 4H-SiC Epitaxial Layer

Author(s)

P. G. Muzykov, University of South Carolina - ColumbiaFollow
Ramesh Madhu Krishna, University of South CarolinaFollow
K. C. Mandal, University of South Carolina - ColumbiaFollow

Document Type

Article

Subject Area(s)

Electrical Engineering, Electronics

Publication Info

Published in Applied Physics Letters, Volume 100, Issue 3, 2012, pages 032101-1-032101-4.

© Applied Physics Letters 2012, American Institute of Physics

Muzykov, P. G., Krishna, R. M., & Mandal, K. C. (17 January 2012). Temperature dependence of current conduction in semi-insulating 4H-SiC epitaxial layer. Applied Physics Letters, 100(3), #032101.

http://dx.doi.org/10.1063/1.3676270

http://scitation.aip.org/content/aip/journal/apl/100/3/10.1063/1.3676270

Rights

© Applied Physics Letters 2012, American Institute of Physics

Muzykov, P. G., Krishna, R. M., & Mandal, K. C. (17 January 2012). Temperature dependence of current conduction in semi-insulating 4H-SiC epitaxial layer. Applied Physics Letters, 100(3), #032101.

http://dx.doi.org/10.1063/1.3676270

http://scitation.aip.org/content/aip/journal/apl/100/3/10.1063/1.3676270