Strain-Engineered Novel III-N Electronic Devices with High Quality Dielectric/Semiconductor Interfaces

Author(s)

M. Asif Khan
M. S. Shur
Grigory Simin, University of South Carolina - ColumbiaFollow

Document Type

Article

Publication Info

Published in Physica Status Solidi (a), Volume 200, Issue 1, 2003, pages 155-160.

©Physcia Status Solidi (a) 2003, Wiley VCH-Verlag.

Khan, M. A., Shur, M. S. & Simin, G. (November 2003). Strain-Engineered Novel III-N Electronic Devices with High Quality Dielectric/Semiconductor Interfaces. Physica Status Solidi (a), 200 (1), 155-160. http://dx.doi.org/10.1002/pssa.200303339

Rights

©Physcia Status Solidi (a) 2003, Wiley VCH-Verlag.

Khan, M. A., Shur, M. S. & Simin, G. (November 2003). Strain-Engineered Novel III-N Electronic Devices with High Quality Dielectric/Semiconductor Interfaces. Physica Status Solidi (a), 200 (1), 155-160. http://dx.doi.org/10.1002/pssa.200303339