Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates

S. Rumyantsev
M. E. Levinshtein
R. Gaska
M. S. Shur
A. Khan
J. W. Yang
Grigory Simin, University of South Carolina - ColumbiaFollow
A. Ping
T. Adesida

Document Type

Article

Published in Physica Status Solidi (a), Volume 176, Issue 1, 1999, pages 201-204.

©Physica Status Solidi (a) 1999, Wiley VCH-Verlag.

Rumyantsev, S., Levinshtein, M. E., Gaska, R., Shur, M. S., Khan, A., Yang, J. W., Simin, G., Ping, A., & Adesida, T. (November 1999). Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates. Physica Status Solidi (a), 176 (1), 201-204. http://dx.doi.org/10.1002/(SICI)1521-396X(199911)176:1<201::AID-PSSA201>3.0.CO;2-L

Rumyantsev, S., Levinshtein, M. E., Gaska, R., Shur, M. S., Khan, A., Yang, J. W., Simin, G., Ping, A., & Adesida, T. (November 1999). Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates. Physica Status Solidi (a), 176 (1), 201-204. http://dx.doi.org/10.1002/(SICI)1521-396X(199911)176:1<201::AID-PSSA201>3.0.CO;2-L