Submicron Gate Si₃N₄/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

Author(s)

V. AdivarahanFollow
M. Gaevski
W. H. Sun
H. Fatima
A. Koudymov
S. Saygi
Grigory Simin, University of South Carolina - ColumbiaFollow
J. Yang
M. A. Khan
A. Tarakji
M. S. Shur
R. Gaska

Document Type

Article

Publication Info

Published in IEEE Electron Device Letters, Volume 24, Issue 9, 2003, pages 541-543.

©IEEE Electron Device Letters 2003, Institute of Electrical and Electronics Engineers (IEEE).

Adivarahan, V., Gaevski, M., Sun, W. H., Fatima, H., Koudymov, A., Saygi, S., Simin, G., Yang, J., Khan, M. A., Tarakji, A., Shur, M. S., & Gaska, R. (September 2003). Submicron Gate Si₃N₄/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors. IEEE Electron Device Letters, 24 (9), 541-543. http://dx.doi.org/10.1109/LED.2003.816574

Rights

©IEEE Electron Device Letters 2003, Institute of Electrical and Electronics Engineers (IEEE).

Adivarahan, V., Gaevski, M., Sun, W. H., Fatima, H., Koudymov, A., Saygi, S., Simin, G., Yang, J., Khan, M. A., Tarakji, A., Shur, M. S., & Gaska, R. (September 2003). Submicron Gate Si₃N₄/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors. IEEE Electron Device Letters, 24 (9), 541-543. http://dx.doi.org/10.1109/LED.2003.816574