An Assessment of Wide Bandgap Semiconductors for Power Devices

Author(s)

J. L. Hudgins
Grigory Simin, University of South Carolina - ColumbiaFollow
Enrico Santi, University of South Carolina - ColumbiaFollow
M. Asif Khan

Document Type

Article

Publication Info

Published in IEEE Transactions on Power Electronics, Volume 18, Issue 3, 2003, pages 907-914.

©IEEE Transactions on Power Electronics 2003, Institute of Electrical and Electronics Engineers (IEEE).

Hudgins, J. L., Simin, G. S., Santi, E., & Khan, M. A. (May 2003). An Assessment of Wide Bandgap Semiconductors for Power Devices. IEEE Transactions on Power Electronics, 18 (3), 907-914. http://dx.doi.org/10.1109/TPEL.2003.810840

Rights

©IEEE Transactions on Power Electronics 2003, Institute of Electrical and Electronics Engineers (IEEE).

Hudgins, J. L., Simin, G. S., Santi, E., & Khan, M. A. (May 2003). An Assessment of Wide Bandgap Semiconductors for Power Devices. IEEE Transactions on Power Electronics, 18 (3), 907-914. http://dx.doi.org/10.1109/TPEL.2003.810840