SiO₂/AlGaN/InGaN/GaN MOSDHFETs

Author(s)

Grigory Simin, University of South Carolina - ColumbiaFollow
A. Koudymov
H. Fatima
Jianping Zhang
J. Yang
M. Asif Khan
X. Hu
A. Tarakji
R. Gaska
M. S. Shur

Document Type

Article

Publication Info

Published in IEEE Electron Device Letters, Volume 23, Issue 8, 2002, pages 458-460.

©IEEE Electron Device Letters 2002, Institute of Electrical and Electronics Engineers (IEEE).

Simin, G., Koudymov, A., Fatima, H., Zhang, J., Yang, J., Khan, M. A., Hu, X., Tarakji, A., Gaska, R., & Shur, M. S. (August 2002). SiO₂/AlGaN/InGaN/GaN MOSDHFETs. IEEE Electron Device Letters, 23 (8), 458-460. http://dx.doi.org/10.1109/LED.2002.801316

Rights

©IEEE Electron Device Letters 2002, Institute of Electrical and Electronics Engineers (IEEE).

Simin, G., Koudymov, A., Fatima, H., Zhang, J., Yang, J., Khan, M. A., Hu, X., Tarakji, A., Gaska, R., & Shur, M. S. (August 2002). SiO₂/AlGaN/InGaN/GaN MOSDHFETs. IEEE Electron Device Letters, 23 (8), 458-460. http://dx.doi.org/10.1109/LED.2002.801316