Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm

Author(s)

Maxim Shatalov
Ashay Chitnis
Alexey Koudymov
Jianping Zhang
Vinod AdivarahanFollow
Grigory Simin, University of South Carolina - ColumbiaFollow
M. Asif Khan

Document Type

Article

Publication Info

Published in Japanese Journal of Applied Physics, Volume 41, 2002, pages L1146-L1148.

©Japanese Journal of Applied Physics 2002, Japanese Society of Applied Physics.

Shatalov, M., Chitnis, A., Koudymov, A., Zhang, J., Adivarahan, V., Simin, G., & Khan, M. A. (October 2002). Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm. Japanese Journal of Applied Physics, 41 (2-10B), L1146. http://dx.doi.org/10.1143/JJAP.41.L1146

Rights

©Japanese Journal of Applied Physics 2002, Japanese Society of Applied Physics.

Shatalov, M., Chitnis, A., Koudymov, A., Zhang, J., Adivarahan, V., Simin, G., & Khan, M. A. (October 2002). Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm. Japanese Journal of Applied Physics, 41 (2-10B), L1146. http://dx.doi.org/10.1143/JJAP.41.L1146