Drift Mobility of Electrons in AlGaN/GaN MOSHFET

Author(s)

P. A. Ivanov
M. E. Levinshtein
Grigory Simin, University of South Carolina - ColumbiaFollow
X. Hu
J. Yang
M. Asif Khan
S. L. Rumyantsev
M. S. Shur
R. Gaska

Document Type

Article

Publication Info

Published in Electronics Letters, Volume 37, Issue 24, 2001, pages 1479-1481.

©Electronics Letters 2001, The Institution of Engineering and Technology.

Ivanov, P. A., Levinshtein, M. E., Simin, G., Hu, X., Yang, J., Khan, M. A., Rumyantsev, S. L., Shur, M. S., & Gaska, R. (22 November 2001). Drift Mobility of Electrons in AlGaN/GaN MOSHFET. Electronics Letters, 37 (24), 1479-1481. http://dx.doi.org/10.1049/el:20010982

Rights

©Electronics Letters 2001, The Institution of Engineering and Technology.

Ivanov, P. A., Levinshtein, M. E., Simin, G., Hu, X., Yang, J., Khan, M. A., Rumyantsev, S. L., Shur, M. S., & Gaska, R. (22 November 2001). Drift Mobility of Electrons in AlGaN/GaN MOSHFET. Electronics Letters, 37 (24), 1479-1481. http://dx.doi.org/10.1049/el:20010982