Transient Processes in AlGaN/GaN Heterostructure Field Effect Transistors

Author(s)

S. L. Rumyantsev
M. S. Shur
R. Gaska
X. Hu
A. Khan
Grigory Simin, University of South Carolina - ColumbiaFollow
J. Yang
N. Zhang
S. DenBaars
U.K. Mishra

Document Type

Article

Publication Info

Published in Electronics Letters, Volume 36, Issue 8, 2000, pages 757-759.

©Electronics Letters 2000, The Institute of Engineering and Technology.

Rumyantsev, S. L., Shur, M. S., Gaska, R., Hu, X., Khan, A., Simin, G., Yang, J., Zhang, N., DenBaars, S., & Mishra, U. K. (13 April 2000). Transient Processes in AlGaN/GaN Heterostructure Field Effect Transistors. Electronics Letters, 36 (8), 757-759. http://dx.doi.org/10.1049/el:20000573

Rights

©Electronics Letters 2000, The Institute of Engineering and Technology.

Rumyantsev, S. L., Shur, M. S., Gaska, R., Hu, X., Khan, A., Simin, G., Yang, J., Zhang, N., DenBaars, S., & Mishra, U. K. (13 April 2000). Transient Processes in AlGaN/GaN Heterostructure Field Effect Transistors. Electronics Letters, 36 (8), 757-759. http://dx.doi.org/10.1049/el:20000573