Enhancement Mode AlGaN/GaN HFET with Selectively Grown PN Junction Gate

Author(s)

X. Hu
Grigory Simin, University of South Carolina - ColumbiaFollow
J. Yang
M. A. Khan
R. Gaska
M. S. Shur

Document Type

Article

Publication Info

Published in Electronics Letters, Volume 36, Issue 8, 2000, pages 753-754.

©Electronics Letters 2000, The Institution of Engineering and Technology.

Hu, X., Simin, G., Yang, J., Khan, M. A., Gaska, R. & Shur, M. S. (13 April 2000). Enhancement Mode AlGaN/GaN HFET with Selectively Grown PN Junction Gate. Electronics Letters, 36 (8), 753-754. http://dx.doi.org/10.1049/el:20000557

Rights

©Electronics Letters 2000, The Institution of Engineering and Technology.

Hu, X., Simin, G., Yang, J., Khan, M. A., Gaska, R. & Shur, M. S. (13 April 2000). Enhancement Mode AlGaN/GaN HFET with Selectively Grown PN Junction Gate. Electronics Letters, 36 (8), 753-754. http://dx.doi.org/10.1049/el:20000557