Mechanism of Current Collapse Removal in Field-Plated Nitride HFETs

Author(s)

A. Koudymov
V. AdivarahanFollow
J. Yang
Grigory Simin, University of South Carolina - ColumbiaFollow
M. Asif Khan

Document Type

Article

Publication Info

Published in IEEE Electron Device Letters, Volume 26, Issue 10, 2005, pages 704-706.

©IEEE Electron Device Letters 2005, Institute of Electrical and Electronics Engineers (IEEE).

Koudymov, A., Adivarahan, V., Yang, J., Simin, G., Khan, M. A. (October 2005). Mechanism of Current Collapse Removal in Field-plated Nitride HFETs. IEEE Electron Device Letters, 26 (10), 704-706. http://dx.doi.org/10.1109/LED.2005.855409

Rights

©IEEE Electron Device Letters 2005, Institute of Electrical and Electronics Engineers (IEEE).

Koudymov, A., Adivarahan, V., Yang, J., Simin, G., Khan, M. A. (October 2005). Mechanism of Current Collapse Removal in Field-plated Nitride HFETs. IEEE Electron Device Letters, 26 (10), 704-706. http://dx.doi.org/10.1109/LED.2005.855409