Double-Scaled Potential Profile in a Group-III Nitride Alloy Revealed by Monte Carlo Simulation of Exciton Hopping

Author(s)

K. Kazlauskas
G. Tamulaitis
A. Zukauskas
M. A. Khan
J. W. Yang
J. Zhang
Grigory Simin, University of South Carolina - ColumbiaFollow
M. S. Shur
R. Gaska

Document Type

Article

Abstract

The temperature dependences of the peak position and width of the photoluminescence band in Al_0.1In_0.01Ga_0.89N layers were explained by Monte Carlo simulation of exciton localization and hopping. The introduction of a doubled-scaled potential profile due to inhomogeneous distribution of indium allowed obtaining a good quantitative fit of the experimental data. Hopping of excitons was assumed to occur through localized states distributed on a 16 meV energy scale within the In-rich clusters with the average energy in these clusters dispersed on a larger (42 meV) scale.

Publication Info

Published in Applied Physics Letters, Volume 83, Issue 18, 2003, pages 3722-3724.

Rights

©Applied Physics Letters 2003, American Institute of Physics (AIP).

Kazlauskas, K., Tamulaitis, G., Zukauskas, A., Khan, M. A., Yang, J. W., Zhang, J., Simin, G., Shur, M. S., & Gaska, R. (28 October 2003). Double-Scaled Potential Profile in a Group-III Nitride Alloy Revealed by Monte Carlo Simulation of Exciton Hopping. Applied Physics Letters, 83 (18), 3722-3724. http://dx.doi.org/10.1063/1.1625111