Time-Resolved Electroluminescence of AlGaN-Based Light-Emitting Diodes with Emission at 285 nm

Author(s)

M. Shatalov
A. Chitnis
V. Mandavilli
R. Pachipulusu
J. P. Zhang
V. AdivarahanFollow
S. Wu
Grigory Simin, University of South Carolina - ColumbiaFollow
M. Asif Khan
G. Tamulaitis
A. Sereika
I. Yilmaz
M. S. Shur
R. Gaska

Document Type

Article

Abstract

We present a study on the time evolution of the electroluminescence(EL)spectra of AlGaN-based deep ultraviolet light-emitting diodes(LEDs) under pulsed current pumping. The ELspectra peaks at 285 nm and 330 nm are found to result from recombination involving band-to-band and free carriers to deep acceptor level transitions. The 330 nm long-wavelength transitions to deep acceptor levels in the p-AlGaN layer as well as the nonradiative processes significantly influence the LED internal quantum efficiency.

Publication Info

Published in Applied Physics Letters, Volume 82, Issue 2, 2003, pages 167-169.

Rights

©Applied Physics Letters 2003, American Institute of Physics (AIP).

Shatalov, M., Chitnis, A., Mandavilli, V., Pachipulusu, R., Zhang, J. P., Adivarahan, V., Wu, S., Simin G., Khan, M. A., Tmulaitis, G., Sereika, A., Yilmaz, I., Shur, M. S., & Gaska, R. (6 January 2003). Time-Resolved Electroluminescence of AlGaN-Based Light-Emitting Diodes with Emission at 285 nm. Applied Physics Letters, 82 (2), 167-169. http://dx.doi.org/10.1063/1.1536729