AlGaN/GaN Heterostructure Field-Effect Transistors on Single-Crystal Bulk AlN

Author(s)

X. Hu
J. Deng
N. Pala
R. Gaska
M. S. Shur
C. Q. ChenFollow
J. Yang
Grigory Simin, University of South Carolina - ColumbiaFollow
M. A. Khan
J. C. Rojo
L. J. Schowalter

Document Type

Article

Abstract

We report on the performance of AlGaN/GaN/AlN heterostructurefield-effect transistors(HFETs) grown over slightly-off c-axis, single-crystal, bulk AlN substrates. Dc and rf characteristics of these devices were comparable to HFETs grown on semi-insulating SiC. The obtained results demonstrate that bulk AlN substrates are suitable for fabricating high-power microwave AlGaN/GaN transistors.

Publication Info

Published in Applied Physics Letters, Volume 82, Issue 8, 2003, pages 1299-1301.

Rights

©Applied Physics Letters 2003, American Institute of Physics (AIP).

Hu, X., Deng, J., Pala, N., Gaska, R., Shur, M. S., Chen, C. Q., Yang, J., Simin, G., Khan, M. A., Rojo, J. C., & Schowalter, L. J. (20 February 2003). AlGaN/GaN Heterostructure Field-Effect Transistors on Single-Crystal Bulk AlN. Applied Physics Letters, 82 (8), 1299-1301. http://dx.doi.org/10.1063/1.1555282