Title

Very Low Threshold Current Density Room Temperature Continuous-Wave Lasing from a Single-Layer InAs Quantum-Dot Laser

Document Type

Article

Subject Area(s)

Optical physics

Abstract

Continuous-wave (CW) lasing operation with a very low threshold current density (J/sub th/=32.5 A/cm/sup 2/) has been achieved at room temperature by a ridge waveguide quantum-dot (QD) laser containing a single InAs QD layer embedded within a strained InGaAs quantum well (dot-in-well, or DWELL structure). Lasing proceeds via the QD ground state with an emission wavelength of 1.25 /spl mu/m when the cavity length is longer than 4.2 mm. For a 5-mm long QD laser, CW lasing has been achieved at temperatures as high as 40/spl deg/C, with a characteristic temperature T/sub 0/ of 41 K near room temperature. Lasers with a 20 /spl mu/m stripe width have a differential slope efficiency of 32% and peak output power of >10 mW per facet (uncoated).

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