Room-Temperature Pulsed Operation of Triple-Quantum-Well GaInNAs Lasers Grown on Misoriented GaAs Substrates by MOCVD
The lasing operation of three-quantum-well GaInNAs stripe geometry lasers grown by MOCVD on 0/spl deg/ and 6/spl deg/ misoriented  GaAs substrates, respectively, have been demonstrated and their performance is compared for the first time. Both devices achieved room temperature, pulsed lasing operation at an emission wavelength of 1.17 /spl mu/m, with a threshold current density of 667 A/cm/sup 2/ for lasers grown on 6/spl deg/ misoriented substrates, and 1 kA/cm/sup 2/ for lasers grown on 0/spl deg/ misoriented substrates. The threshold for the lasers grown on 6/spl deg/ misoriented substrates compares favorably with the best results for GaInNAs lasers. Lasers with narrower stripe width and a planar geometry have also been demonstrated by the use of lateral selective wet oxidation for current confinement, with a threshold current density of 800 A/cm/sup 2/ for 25-/spl mu/m-wide devices.
Postprint version. Published in IEEE Photonics Technology Letters, Volume 11, Issue 10, 1999, pages 1208-1210.
© IEEE Photonics Technology Letters, 1999, IEEE
Hains, C.P., Li, N.Y., Yang, K., Huang, X.D., Cheng, J. (1999). Room-Temperature Pulsed Operation of Triple-Quantum-Well GaInNAs Lasers Grown on Misoriented GaAs Substrates by MOCVD. IEEE Photonics Technology Letters, 11(10), 1208-1210.