Title

Room-Temperature Pulsed Operation of Triple-Quantum-Well GaInNAs Lasers Grown on Misoriented GaAs Substrates by MOCVD

Document Type

Article

Subject Area(s)

Physics

Abstract

The lasing operation of three-quantum-well GaInNAs stripe geometry lasers grown by MOCVD on 0/spl deg/ and 6/spl deg/ misoriented [100] GaAs substrates, respectively, have been demonstrated and their performance is compared for the first time. Both devices achieved room temperature, pulsed lasing operation at an emission wavelength of 1.17 /spl mu/m, with a threshold current density of 667 A/cm/sup 2/ for lasers grown on 6/spl deg/ misoriented substrates, and 1 kA/cm/sup 2/ for lasers grown on 0/spl deg/ misoriented substrates. The threshold for the lasers grown on 6/spl deg/ misoriented substrates compares favorably with the best results for GaInNAs lasers. Lasers with narrower stripe width and a planar geometry have also been demonstrated by the use of lateral selective wet oxidation for current confinement, with a threshold current density of 800 A/cm/sup 2/ for 25-/spl mu/m-wide devices.

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