An ultraviolet light-emitting diode with peak emission wavelength at 340 nm is reported. The active layers of the device were comprised of quaternary AlInGaN/AlInGaN multiple quantum wells, which were deposited over sapphire substrates using a pulsed atomic-layer epitaxy process that allows precise control of the composition and thickness. A comparative study of devices over sapphire and SiC substrates was done to determine the influence of the epilayer design on the performance parameters and the role of substrate absorption.
Published in Applied Physics Letters, Volume 79, Issue 25, 2001, pages 4240-4242.
©Applied Physics Letters 2001, American Institute of Physics (AIP).
Adivarahan, V., Chitnis, A., Zhang, J. P., Shatalov, M., Yang, J. W., Simin, G., Khan, M. A., Gaska, R., & Shur, M. S. (17 December 2001). Ultraviolet Light-Emitting Diodes at 340 nm using Quaternary AlInGaN Multiple Quantum Wells. Applied Physics Letters, 79 (25), 4240-4242. http://dx.doi.org/10.1063/1.1425453